发明名称 |
CMOS imager with enhanced transfer of charge and low voltage operation and method of formation |
摘要 |
A dopant gradient region of a first conductivity type and a corresponding channel impurity gradient below a transfer gate and adjacent a charge collection region of a CMOS imager photodiode are disclosed. The channel impurity gradient in the transfer gate provides a complete charge transfer between the charge collection region of the photodiode and a floating diffusion node. The dopant gradient region is formed by doping a region at one end of the channel with a low enhancement dopant and another region at the other end of the channel with a high enhancement dopant.
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申请公布号 |
US7385232(B2) |
申请公布日期 |
2008.06.10 |
申请号 |
US20050158045 |
申请日期 |
2005.06.22 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
PATRICK INNA |
分类号 |
H01L31/072;H01L21/331;H01L27/146;H01L29/04;H01L31/062 |
主分类号 |
H01L31/072 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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