NITRIDE SEMICONDUCTORS BASED LIGHT EMITTING DEVICES

摘要

A nitride semiconductors based light emitting device is provided to improve the uniformity of light emitting at a light emitting surface of a light emitting device by effectively using a quasi-2-dimensional free electron and free hole gas. A buffer layer(120) is grown on a substrate(110). A first p-type contact layer(130a) is grown on the buffer layer. A second p-type contact layer(130b) is grown on the first p-type contact layer. A first hole diffusion layer(140a) is formed on the second p-type contact layer. A second hole diffusion layer(140b) is grown on the first hole diffusion layer. A light emitting active region is grown on the second hole diffusion layer. A second electron diffusion layer(160a) is grown on the light emitting active region. A first electron diffusion layer(160b) is grown on the second electron diffusion layer. A second n-type contact layer(170a) is grown on the first electron diffusion layer. A first n-type contact layer(170b) is grown on the second n-type contact layer.