发明名称 |
High-voltage metal-oxide-semiconductor devices and method of making the same |
摘要 |
An improved high-voltage process is disclosed. In order to improve the performance in terms of breakdown voltage and to maintain the integrity of the STI structures, the thick gate oxide layer of the high-voltage device area is not etched back before a high-dosage ion doping process. One photo mask is therefore omitted.
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申请公布号 |
US7385274(B2) |
申请公布日期 |
2008.06.10 |
申请号 |
US20060381749 |
申请日期 |
2006.05.05 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
LEE WEN-FANG;HSU WEI-LUN;LIN YU-HSIEN |
分类号 |
H01L29/93 |
主分类号 |
H01L29/93 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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