Method of forming low capacitance ESD robust diodes

摘要

A method of forming a diode having a capacitance below 0.1 pF and a breakdown voltage of at least 500V. The method including forming an anode of a first conductivity type and a cathode of a second conductivity type disposed below the anode. At least one of the cathode and anode have multiple, vertically abutting diffusion regions. Forming isolation regions such that the cathode and anode are disposed between and bounded by adjacent isolation regions.