发明名称 Method for fabricating semiconductor device and display device
摘要 It is an object of the present invention to alleviate unevenness due to an opening for making a contact with the lower layer even when the opening has a large diameter (1 mum or more). Thus, it is a further object of the invention to reduce defects caused by the unevenness due to the contact hole. It is a feature of the invention to form a wiring by filling the contact hole with conductive fine particles. The conductive fine particles can be easily dispersed into a wiring material by using conductive fine particles having high wettability with the wiring material, thereby making a contact. Thus, planarization of a contact hole can be achieved without performing a reflow process. Further, more planarity can be obtained by performing a reflow process in addition, and the reliability is improved accordingly.
申请公布号 US7384862(B2) 申请公布日期 2008.06.10
申请号 US20040878498 申请日期 2004.06.29
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI
分类号 H01L21/44;G02F1/1362;H01L21/288;H01L21/768;H01L21/77;H01L21/84 主分类号 H01L21/44
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