SCHOTTKY BARRIER NANOWIRE FIELD EFFECT TRANSISTOR AND METHOD FOR FABRICATING THE SAME

摘要

A schottky barrier nano-wire field effect transistor and a manufacturing method thereof are provided to secure thermal stability by forming a source/drain electrode using metal silicide when the source/drain electrode is jointed to a nano-wire. A channel(140) made of nano-wire is formed on a substrate(100). A source/drain electrode(150) made of metal silicide is formed on the upper surface of a substrate, and is electrically connected to both ends of the channel. A gate electrode(170) is formed to enclose the channel, and a gate insulating layer(160) is formed between the channel and the gate electrode. The nano-wire is made of any one selected from a group consisting of ZnO, V2O5, GaN and AlN.