| 发明名称 |
Spacer chalcogenide memory device |
| 摘要 |
The present invention includes devices and methods to form memory cell devices including a spacer comprising a programmable resistive material alloy. Particular aspects of the present invention are described in the claims, specification and drawings.
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| 申请公布号 |
US7385235(B2) |
申请公布日期 |
2008.06.10 |
| 申请号 |
US20040983437 |
申请日期 |
2004.11.08 |
| 申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
LUNG HSIANG LAN |
| 分类号 |
H01L27/108;H01L27/24;H01L45/00 |
主分类号 |
H01L27/108 |
| 代理机构 |
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| 主权项 |
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