METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to improve the collapse phenomenon of a bit line pattern and to prevent the bridge of a storage node contact by forming a second sidewall protective layer. A pattern is formed on a substrate(31). A double-layered sidewall protection layer is formed on a sidewall of the pattern to prevent a collapse thereof. A dielectric layer(32) is formed on the pattern. The dielectric layer is etched to form an open section between the patterns. A conductive material is gap-filled in the open section to form a contact plug. When the sidewall protection layer is formed, a first sidewall protection layer(36) is formed on the whole surface of the resultant structure including the pattern. A second sidewall protection layer(37) is formed on the first sidewall protection layer. The first and second sidewall protection layers are etched to leave the sidewall protection layer on the sidewall of the pattern.