| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor element which has stable low on-resistance and high voltage resistance. <P>SOLUTION: A GaN-HFET 21 is manufactured by forming a p-GaN layer 1 made of a p-type Al<SB>x</SB>Ga<SB>1-x</SB>N (0≤x<1) and an n-AlGaN layer 2 made of an n-type Al<SB>y</SB>Ga<SB>1-y</SB>N (0<y<1, x<y) on a support board by epitaxial growth with a crystal growth plane of a (1-101) plane or a (11-20) plane, and forming a source electrode 3, a drain electrode 4, and a gate electrode 5 thereon. As a result, the plane orientation of a heterointerface 19 between the p-GaN layer 1 and the n-AlGaN layer 2 is determined to be (1-101) or (11-20). <P>COPYRIGHT: (C)2008,JPO&INPIT |
