| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride phosphor and an oxynitride phosphor stably emitting light in high efficiency by a light in a range of 430-480 nm from a semiconductor light emitting device, a method of producing these phosphors and a light emitting device with stable characteristics of high efficiency. <P>SOLUTION: A divalent europium-activated oxynitride phosphor substantially expressed by general formula (A): Eu<SB>a</SB>Si<SB>b</SB>Al<SB>c</SB>O<SB>d</SB>N<SB>e</SB>, where its reflectance in a longer wavelength visible light region than the peak wavelength of emitted light is 95% or above; a divalent europium-activated oxynitride phosphor substantially expressed by general formula (B): MI<SB>f</SB>Eu<SB>g</SB>Si<SB>h</SB>Al<SB>k</SB>O<SB>m</SB>N<SB>n</SB>, where its reflectance in a longer wavelength visible light region than the peak wavelength of emitted light is 95% or above; or a divalent europium-activated nitride phosphor substantially expressed by general formula (C): (MII<SB>1-p</SB>Eu<SB>p</SB>)MIIISiN<SB>3</SB>, where its reflectance in a longer wavelength visible light region than the peak wavelength of emitted light is 95% or above is disclosed. Also the methods for producing these phosphors and the light emitting device using these phosphors are provided. <P>COPYRIGHT: (C)2008,JPO&INPIT |
