| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device providing a desired control voltage through more proper voltage trimming. <P>SOLUTION: A parameter control circuit of the nonvolatile semiconductor memory device 100 controls a parameter register to sequentially output a plurality of parameters to a voltage generation control circuit, counts for a fixed time, oscillations of trimming flag signals which are sequentially output from the voltage generation control circuit in accordance with each parameter, stores the count value in association with each parameter, and selects a parameter having a maximum count value as a parameter corresponding to a control voltage closest to an external reference voltage. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
