METHOD FOR FORMING A SELF-ALIGNED NITROGEN-CONTAINING COPPER SILICIDE CAPPING LAYER IN A MICROSTRUCTURE DEVICE

摘要

By forming a copper/silicon/nitrogen alloy in a surface portion of a copper-containing region on the basis of a precursor layer, highly controllable and reliable process conditions may be established. The precursor layer may be formed on the basis of a liquid precursor solution, which may exhibit a substantially self-aligned and self-limiting deposition behavior.