<p>A high tensile stress capping layer on Cu interconnects in order to reduce Cu transport and atomic voiding at the Cu/dielectric interface. The high tensile dielectric film is formed by depositing multiple layers of a thin dielectric material, each layer being under approximately 50 angstroms (5 nm) in thickness. Each dielectric layer is plasma treated prior to depositing each succeeding dielectric layer such that the dielectric cap has an internal tensile stress.</p>
申请公布号
WO2008064963(A1)
申请公布日期
2008.06.05
申请号
WO2007EP61481
申请日期
2007.10.25
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION;IBM UNITED KINGDOM LIMITED;WONG, KEITH, KWONG HON;YANG, CHIH-CHAO;YANG, HAINING