| 摘要 |
To obtain a copper film having satisfactory electrical characteristics with a simple structure, there is provided a method of manufacturing a semiconductor device including the step of forming on a semiconductor substrate a barrier metal film to be a seed film which functions as a cathode when a copper film is formed by electrolytic plating (S 10 ), the step of immersing the barrier metal film in a plating solution containing copper ion in a plating bath for a predetermined length of time with the barrier metal film and an anode being substantially at the same potential (S 20 ), and the step of, after the barrier metal film is immersed in the copper sulfate plating solution for the predetermined length of time, applying voltage between the barrier metal film and the anode with the barrier metal film being kept immersed in the plating solution to form a copper film on the barrier metal film (S 30 ).
|
