| 摘要 |
A method for manufacturing a semiconductor device is provided to prevent punch phenomenon by forming a plate electrode in a fuse region as a laminated structure of a TiN layer, a nitride layer for an etch stop, and a poly silicon layer. A bit line(204) is formed on a semiconductor substrate(200). A first oxide layer(206), a nitride layer(208), and a second oxide layer(210) are formed in turn to cover the bit line. A plate electrode(220) is formed on the second oxide layer. A third oxide layer(230) is formed on the second oxide layer to cover the plate electrode. The third oxide layer, the second oxide layer, the nitride layer, and the first oxide layer are etched to form a first contact hole(H1) and a second contact hole(H2), which respectively expose the plate electrode and the bit line. The plate electrode is a laminated structure of a first conductive layer(212), an etch stop layer(214), and a second conductive layer(216) to prevent punch phenomenon. The first conductive layer is a TiN layer. The etch stop layer is a nitride layer. The second conductive layer is a poly silicon layer.
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