| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device equipped with an interlayer insulating film as materially one film using same insulating material in locations where arrangement densities of interconnection differ each other and causing parasitic capacitances each corresponding to the arrangement density of the interconnection in the each location, and to provide a manufacturing method thereof. SOLUTION: The manufacturing method of the semiconductor device having a first area and a second area where the arrangement densities of the interconnection differ each other, includes processes of: forming a porous insulating film which insulates between the area interconnections; and irradiating energy ray on the second area with the arrangement density smaller than that of the first area, of exposed surface of the insulating film, thereby modifying structure of the insulating film so that Young's modulus value of the second area of the insulating film becomes larger than that of the first area. COPYRIGHT: (C)2008,JPO&INPIT |
