| 摘要 |
The present invention is directed to sensors that use wide band gap piezoelectric films such as aluminum nitride and zinc oxide. The films can be deposited with chemical and physical methods and etched or micro machined into miniature and micro sensing elements. Various piezoelectric sensing structures such as compression mode and cantilever-type accelerometers, diaphragm-type pressure sensors, and micro sensor arrays can be manufactured with the sensing elements. They can be used in the measurements of vibration, shock, dynamic pressure, stress, and high resolution ultrasound non-destructive test at high temperature up to 800-1000° C.
|
