METHOD OF FABRICATING METAL-INSULATOR-METAL (MIM) DEVICE WITH STABLE DATA RETENTION

摘要

In the method of fabricating a metal-insulator-metal (MIM) device, a first electrode of alpha-Ta is provided. The Ta of the first electrode is oxidized to form a Ta₂O₅ layer on the first electrode. A second electrode of beta-Ta is provided on the Ta₂O₅ layer. Such a device exhibits strong data retention, along with resistance to performance degradation under high temperatures.