发明名称 |
Charge trap layer for a charge trap semiconductor memory device and method of manufacturing the same |
摘要 |
Provided are a charge trap semiconductor memory device including a charge trap layer on a semiconductor substrate, and a method of manufacturing the charge trap semiconductor memory device. The method includes: (a) coating a first precursor material on a surface of a semiconductor substrate to be deposited and oxidizing the first precursor material to form a first layer formed of an insulating material; (b) coating a second precursor material formed of metallicity on the first layer; (c) supplying the first precursor material on the surface coated with the second precursor material to substitute the second precursor material with the first precursor material; and (d) oxidizing the first and second precursor materials obtained in (c) to form a second layer formed of an insulating material and a metal impurity, and (a) through (d) are performed at least one time to form a charge trap layer having a structure in which the metal impurity is isolated in the insulating material.
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申请公布号 |
EP1928014(A2) |
申请公布日期 |
2008.06.04 |
申请号 |
EP20070121684 |
申请日期 |
2007.11.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD |
发明人 |
SEOL, KWANG-SOO;MIN, YO-SEP;SHIN, SANG-MIN |
分类号 |
H01L21/28;H01L29/423;H01L29/788;H01L29/792 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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