SEMICONDUCTOR MEMORY DEVICE

摘要

A semiconductor memory device is provided to reduce the number of data input/output global lines, by enabling a number of bank groups to share a data input/output global line used in data input/output operation by being connected to each bank group one to one. A number of bank groups(GROUP_0-GROUP_3) comprise a number of banks sharing a group global line. A data input unit(320) transfers data applied from the outside to a data input global line in response to a write command corresponding to each bank group. A data multiplexing unit(340) transfers data loaded on the data input global line to one of a number of group global lines in response to the write command. A command decoding unit(360) generates the write command by decoding an address and a command applied from the outside.