| 摘要 |
A method of manufacturing a particle wafer for measuring cleaning effect is provided to manufacture the particle wafer conveniently by creating many artificial particles to be attached on a surface of the particle wafer. An oxide layer is formed on a sacrificial wafer(S100). The sacrificial wafer is soaked into a bath containing etching solutions for a predetermined time, and the oxide layer is etched so that a large quantity of oxide particles can be created and distributed within the etching solutions(S200). A standard wafer, which is to be produced as a particle wafer, is soaked into the bath, so that the oxide particles can be absorbed on the standard wafer(S300). The standard wafer is rinsed to remove remaining etching solutions(S400). The standard wafer is dried(S500).
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