| 摘要 |
A method of manufacturing a semiconductor device is provided to prevent the short caused by voids by adding a CVD oxide layer of a spacer shape, and to improve the short between a source and a drain by reducing the loss of a field oxide layer. A trench is formed at an isolation region of a semiconductor substrate(10). A thermal oxide layer(16) is formed on the entire surface of substrate. A liner nitride layer(18) is formed above the thermal oxide layer. A first SOD(Spin on Dielectric) layer(20) filling the trench is formed on the liner nitride layer. The first SOD layer is removed. A CVD oxide layer(22) is formed on the liner nitride layer and the first SOD layer. A second SOD layer(24) filling the trench is formed on the first SOD layer, the CVD oxide layer and the liner nitride layer. The second SOD layer is removed. A field oxide layer is formed by depositing a high density plasma oxide layer(26) above the second SOD layer, the CVD oxide layer and the liner nitride layer, and flattening the high density plasma oxide layer.
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