| 摘要 |
<p>A semiconductor device and a manufacturing method thereof are provided to prevent carrier leakage from a contact line and to reduce a manufacturing cost. A gate insulating layer(23) is formed on a semiconductor substrate. A gate electrode(24) is formed on the gate insulating layer. A pair of first diffusion layers(25,27) are formed on the semiconductor substrate. The gate electrode is inserted between the first diffusion layers and is separated from the first diffusion layers. A pair of second diffusion layers(26,28) are formed on the semiconductor substrate. The gate electrode is inserted between the second diffusion layers and is formed to surround the first diffusion layers. Each of the second diffusion barriers is deeper than each of the first diffusion barriers. The impurity density of the second diffusion barriers is lower than each of the second diffusion barriers. A plurality of contact lines(31,32) are provided on the first diffusion layer. A first insulating layer(33) is formed on one of the second diffusion layers between the gate electrode and the contact wiring.</p> |
