Method of manufacturing a semiconductor device with dual fully silicided gate

摘要

Manufacturing a dual work function semiconductor device involves providing a first metal layer (108) over a first electrode (102a) in a first region (101a), and at least a first work function tuning element. Also provided is a second metal layer (109) of a second metal in a second region (101b) at least over a second electrode (102b). A first silicidation of the first electrode (102a) and a second silicidation of the second electrode (102b) are performed simultaneously.