METHOD OF MANUFACTURING OF OXIDE THIN FILM TRANSISTOR ARRAY SUBSTRATE AND OXIDE THIN FILM TRANSISTOR ARRAY SUBSTRATE

摘要

A method of manufacturing an oxide thin film transistor substrate and the oxide thin film transistor substrate are provided to form a first area thinner than a second area and to form data wirings on the second area to increase an on/off current ratio, to prevent afterimages of the transistor substrate and to preclude the property degradation of the transistor. Gate wirings(22,26) are formed on an insulation substrate(10). Oxide semiconductor layer patterns(42,44) and data wirings(62,65,66,67) are formed on the gate wirings. The oxide semiconductor layer patterns are divided into a first area(A) and a second area. The first area is thinner than the second area. The data wirings are formed on the second area. A thickness ratio of the first and second areas is from more than 0.123 to less than 1, and the thickness of the first area is from more than 160Å to less than 1300Å.