发明名称 Method of linearizing ESD capacitance
摘要 An ESD protection circuit for an input/output pad of an IC is disclosed with discharge paths to both a power rail and ground. The ESD circuit is arranged with NMOS and PMOS transistors arranged with their drains connected to the pad. However, the drain capacitances have voltage sensitivities that compensate or cancel each other, and with proper sizing the capacitance load on the pad can be made substantially constant over a given voltage range. By providing a discharge path to a power rail, the ESD circuit may be designed to be more tolerant of overvoltages on the power rail.
申请公布号 US7382593(B2) 申请公布日期 2008.06.03
申请号 US20050226020 申请日期 2005.09.14
申请人 FAIRCHILD SEMICONDUCTOR 发明人 MISKE MYRON;MORRILL DAVID
分类号 H02H3/22 主分类号 H02H3/22
代理机构 代理人
主权项
地址