发明名称 |
Technique for forming a substrate having crystalline semiconductor regions of different characteristics located above a crystalline bulk substrate |
摘要 |
By direct bonding of two crystalline semiconductor layers of different crystallographic orientation and/or material composition and/or internal strain, bulk-like hybrid substrates may be formed, thereby providing the potential for forming semiconductor devices in accordance with a single transistor architecture on the hybrid substrate.
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申请公布号 |
US7381624(B2) |
申请公布日期 |
2008.06.03 |
申请号 |
US20050177214 |
申请日期 |
2005.07.08 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
WEI ANDY;KAMMLER THORSTEN;RAAB MICHAEL;HORSTMANN MANFRED |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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