METHOD OF FORMING A PATTERN AND METHOD OF MANUFACTURING A CAPACITOR USING THE SAME

摘要

A pattern forming method and a method for manufacturing a capacitor using the same are provided to maximize the process efficiency by completely removing a third buffer layer pattern only using a developer without performing a plasma ashing process. A conductive layer having a uniform thickness is formed on a mold layer with an opening. A first buffer layer pattern(115) is embedded in the opening formed the conductive layer, and includes linear polymers having an anthracene-methyl methacrylate cyclic unit and an alkoxy vinyl benzene cyclic unit. The first buffer layer pattern is hardened to form a second buffer layer pattern which is cross-linked with the polymers by hardening the first buffer layer pattern and has insolubility for a developer. The conductive layer is removed from the upper portion of the mold layer by using the second buffer layer pattern an etching mask.