| 摘要 |
PROBLEM TO BE SOLVED: To provide a lateral MOS transistor having a high durability against surges such as ESD, with no increase of a manufacturing cost. SOLUTION: In the lateral MOS transistor 100, a source wiring Ls and a drain wiring Ld, in stripe, are formed on a source region S and a drain region D respectively. The source wiring Ls and the drain wiring Ld are connected to source region S and drain region D respectively by at least three contacts, while the source wirings Ls themselves and the drain wirings Ld themselves are connected respectively. In the drain region D, R1>R2>R3 is established where R1 is a contact resistor of a first drain contact Cd1, R2 is a contact resistor of a second drain contact Cd2, and R3 is a contact resistor of a third drain contact Cd3, in the order closer to a connection part Jd that connects the drain wirings Ld together, among three or more contacts. COPYRIGHT: (C)2008,JPO&INPIT
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