| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device which is highly reliable at high output power operation and operates at a low operation voltage. SOLUTION: The semiconductor laser device includes a first conductivity-type clad layer side guide layer and a second conductivity-type clad layer side guide layer each of which is disposed to be in direct contact with each face of an active layer so that the active layer is held between both guide layers, a first conductivity-type clad layer disposed to be in direct contact with the first conductivity-type clad layer side guide layer, and a second conductivity-type clad layer disposed to be in direct contact with the second conductivity-type clad layer side guide layer. The first conductivity-type clad layer side guide layer and the second conductivity-type clad layer side guide layer are made of an InGaAsP that is matched in lattice structure to an GaAs, and that has an As composition ratio of more than 0 to 0.3 or less. The first conductivity-type clad layer and the second conductivity-type clad layer are made of an AlGaAs whose Al composition ratio is less than 1.0 and not more than an Al composition ratio providing a refractive index smaller than that of InGaAsP. COPYRIGHT: (C)2008,JPO&INPIT
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