Semiconductor Devices Having Low Threading Dislocations and Improved Light Extraction and Methods of Making the Same

摘要

Semiconductor device structures are provided that are suitable for use in the fabrication of electronic devices such as light emitting diodes. The semiconductor device structures include a substrate having a roughened growth surface suitable for supporting the growth of an epitaxial region thereon. The device structure can include an epitaxial region having reduced defects and/or improved radiation extraction efficiency on the roughened growth surface of the substrate. The roughened growth surface of the substrate can have an average roughness R_a of at least about 1 nanometer (nm) and an average peak to valley height R_z of at least about 10 nanometers (nm).