发明名称 Positive resist composition and patterning process
摘要 A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid, and (B) an acid generator. The resin (A) is a polymer comprising tertiary alkyl protective group units having a hydrophobic tetracyclo[4.4.0.1<SUP>2,5</SUP>.1<SUP>7,10</SUP>]-dodecane structure, hydroxyadamantane units, monocyclic lactone units, and carboxylic acid units. The acid generator (B) is a specific sulfonium salt compound.
申请公布号 US2008124652(A1) 申请公布日期 2008.05.29
申请号 US20070984614 申请日期 2007.11.20
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 NISHI TSUNEHIRO;TACHIBANA SEIICHIRO;KOBAYASHI KATSUHIRO
分类号 G03F7/20;G03C1/73 主分类号 G03F7/20
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