| 摘要 |
Various semiconductor devices and method of manufacturing the same are provided. In one aspect, a method of manufacturing is provided that includes forming an insulating layer on a backside of a semiconductor chip and forming a metallic thermal interface material on the insulating layer. In another aspect, an integrated circuit is provided that includes a semiconductor chip that has a front side and a backside. An insulating layer is on the backside and a metallic thermal interface material is on the insulating layer.
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