摘要 |
A semiconductor device is provided. The semiconductor device includes a region of closely packed lines and a region including an isolated line, separated by a region of carbon doped silicon oxide. As the surface of the semiconductor device is etched, the etching rate varies depending on the material being etched. Accordingly, the cross-sectional area of the isolated line must be adjusted to compensate for the slowed etching process in that region. The close packed lines may have a height, a, and a width, b thus having a cross-sectional area of a*b. However, the isolated line may have a height D*a, and a width, E*b, where D*E=1. Singular or multiple etching processes may used and the line widths adjusted accordingly.
|