| 摘要 |
An exemplary damascene interconnect structure includes a substrate ( 20 ), a first dielectric layer ( 21 ) on the substrate, a plurality of trenches ( 27 ) formed in the first dielectric layer, and a plurality of metal lines ( 24 ) filled in the trenches. The first dielectric layer includes multi sub-dielectric layers ( 211, 212, 213 ). Wherein a plurality of air gaps ( 28 ) are maintained between the metal lines and at least one of the sub-dielectric layers. A method for fabricating the damascene interconnect structure is also provided.
|
