COMPOSITION FOR RESIST LOWER LAYER FILM FORMATION AND METHOD FOR PATTERN FORMATION

摘要

This invention provides a composition for resist lower layer film formation, which has excellent etching resistance and, in a dry etching process, is less likely to cause bending of a lower layer film pattern, and can transfer a resist pattern faithfully onto a substrate to be processed with high reproducibility. The composition for resist lower layer film formation comprises (A) an aminated fullerene comprising at least one amino group attached to a fullerene skeleton and (B) a solvent.