| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor single crystal substrate, in which the carrier concentration in the substrate plane is more uniformed with respect to the compound semiconductor single crystal substrate produced by a VB (Vertical Bridgman) method or a VGF (Vertical Gradient Freeze) method. SOLUTION: The compound semiconductor single crystal substrate is produced by a method comprising starting crystal growth from a seed crystal S previously arranged at the bottom part of a vessel 2, then gradually progressing the crystallization upward, crystallizing the whole raw material melt M accommodated in the vessel 2, and cutting the obtained crystal, and satisfies at least two of following conditions A to C: condition A; the average carrier concentration in the surface of the substrate is 1.0×10<SP>18</SP>-5.0×10<SP>19</SP>/cm<SP>3</SP>, condition B; the maximum value or the minimum value of the carrier concentration in the surface of the substrate is within a fluctuation range of±5% of the average carrier concentration in the surface of the substrate, and condition C; the average dislocation density in the surface of the substrate is 0-50 pieces/cm<SP>2</SP>. COPYRIGHT: (C)2008,JPO&INPIT
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