发明名称 Capacitor device
摘要 A process for forming a capacitive couple. The process includes forming a highly porous body of a conducting material with interior struts and voids in electrical contact. A dielectric layer is formed in the voids on the struts with a material having a dielectric constant above 100. An insulating layer is formed on the struts not covered by the dielectric layer. A conductive layer is formed on the dielectric layer and on the insulating layer.
申请公布号 US2008123251(A1) 申请公布日期 2008.05.29
申请号 US20060605160 申请日期 2006.11.28
申请人 RANDALL MICHAEL S;BLAIS PETER;PINCELOUP PASCAL;SKAMSER DANIEL J;GURAV ABHIJIT;TAJUDDIN AZIZUDDIN;KINARD JOHN T;LESSNER PHILIP 发明人 RANDALL MICHAEL S.;BLAIS PETER;PINCELOUP PASCAL;SKAMSER DANIEL J.;GURAV ABHIJIT;TAJUDDIN AZIZUDDIN;KINARD JOHN T.;LESSNER PHILIP
分类号 H01G9/00 主分类号 H01G9/00
代理机构 代理人
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