GALLIUM NITRIDE CRYSTALS AND WAFERS AND METHOD OF MAKING,申请号WO2007US23694-传众专利搜索

发明名称	GALLIUM NITRIDE CRYSTALS AND WAFERS AND METHOD OF MAKING
摘要	A crystal comprising gallium nitride is disclosed. The crystal has at least one grain having at least one dimension greater than 2.75 mm, a dislocation density less than about 10<SUP>4</SUP> cm<SUP>-2</SUP>, and is substantially free of tilt boundaries.
申请公布号	WO2008063444(A2)	申请公布日期	2008.05.29
申请号	WO2007US23694	申请日期	2007.11.09
申请人	MOMENTIVE PERFORMANCE MATERIALS INC.;D'EVELYN, MARK, P.;PARK, DONG-SIL;LEBOEUF, STEVEN, F.;ROWLAND, LARRY, B.;NARANG, KRISTI, J.;HUICONG, HONG;ARTHUR, STEPHEN, D.;SANDVIK, PETER, M.	发明人	D'EVELYN, MARK, P.;PARK, DONG-SIL;LEBOEUF, STEVEN, F.;ROWLAND, LARRY, B.;NARANG, KRISTI, J.;HUICONG, HONG;ARTHUR, STEPHEN, D.;SANDVIK, PETER, M.
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