| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device which can reduce power consumption in an active standby mode. SOLUTION: A shared transistor SHR0 controls connection between a pair of bit lines BL and /BL in MAT on an MAT0 side and a pair of bit lines BL and /BL in a sense amp SA. The sense amp SA has four transistors differentially amplifies a difference voltage between a pair of the bit lines BL and /BL. After a word line is activated and the sense amp is activated so that the difference voltage between a pair of the bit lines gets amplified, the shared transistor SHR0 turned on is turned off, and a precharge/equalizing circuit 102 is activated to precharge a pair of the bit lines in the sense amp SA to VARY/2, thereby reducing an offleak current of the transistors in the sense amp SA and providing low power consumption of the semiconductor storage device. COPYRIGHT: (C)2008,JPO&INPIT
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