发明名称 |
METHOD OF FORMING A METAL CONTACT AND PASSIVATION OF A SEMICONDUCTOR FEATURE |
摘要 |
A method of forming a metal contact and passivation of a semiconductor feature, and devices made using the method. The method comprises the steps of forming a dielectric mask on a semiconductor substrate utilising photolithography processes; etching the semiconductor substrate such that one or more features are formed underneath respective portions of the dielectric mask; depositing a passivation layer on the substrate with the dielectric mask in place above the features; subjecting the substrate to an etchant such that the dielectric mask is etched at a higher rate than the passivation layer, whereby portions of the passivation layer deposited on the dielectric mask are lifted off from the substrate; and depositing a metal layer on the substrate including over the remaining passivation layer and exposed portions of the features.
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申请公布号 |
US2008121916(A1) |
申请公布日期 |
2008.05.29 |
申请号 |
US20070939227 |
申请日期 |
2007.11.13 |
申请人 |
AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH |
发明人 |
TENG JINGHUA;LIM EE LEONG;CHUA SOO JIN |
分类号 |
H01S5/22;H01L21/4763;H01L33/38 |
主分类号 |
H01S5/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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