| 摘要 |
Provided is a method for fabricating a semiconductor device. In the method, a gate oxide layer and a gate electrode is formed on a substrate, and a first dopant implanted into the substrate using the gate electrode as an ion implantation mask. An insulation layer is formed on the gate electrode and the substrate to a predetermined thickness. The insulation layer is etched to form a spacer at a side of the gate electrode. A second dopant is implanted into the substrate using the spacer as an ion implantation mask. The substrate is heat treated by spike annealing after the first dopant and/or the second dopant is implanted into the substrate.
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