METHODS FOR HIGH VOLUME MANUFACTURE OF GROUP III-V SEMICONDUCTOR MATERIALS

摘要

The invention relates to methods for the sustained, high-volume production of Group III-V compound semiconductor material suitable for fabrication of optic and electronic components, for use as substrates for epitaxial deposition, or for wafers. In preferred embodiments, these methods are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. Specifically, the method includes reacting an amount of a gaseous Group III precursor as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber under conditions sufficient to provide sustained high volume manufacture of the semiconductor material on one or more substrates, with the gaseous Group III precursor provided at a controllable mass flow of the Group III element of at least 50g per hour for a time of at least 48 hours without requiring interruption of the high volume manufacturing process.