| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem of a large effect by metallic impurities because of a low gettering capacity in a semiconductor device having an SOI structure. SOLUTION: A first semiconductor substrate and a second semiconductor substrate are prepared, a first insulating film is formed on the surface of the first semiconductor substrate and a circuit element is formed on the first surface of the second semiconductor substrate. The second surface of the second semiconductor substrate is polished, a second insulating film is formed on the second surface of the second semiconductor substrate and the first insulating film and the second insulating film are laminated. Consequently, the gettering of impurities mixed by a manufacturing process is conducted surely, and the semiconductor device having the SOI structure can be manufactured. COPYRIGHT: (C)2008,JPO&INPIT
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