| 摘要 |
PROBLEM TO BE SOLVED: To provide a memory cell design and a method for storing information including use of a transistor having a source, a drain, a channel, a gate oxide, a gate electrode and a modifiable gate stack layer. SOLUTION: The on-resistance of the transistor is changed by causing a non-charge-storage based physical change in the modifiable gate stack layer, to store information. COPYRIGHT: (C)2008,JPO&INPIT |
