| 摘要 |
PROBLEM TO BE SOLVED: To provide a superposing deviation inspection apparatus, marks for inspecting superposing deviations and overlap deviation inspection method, which enable automatic inspection of the presence of a superposing deviation in a shorter time between a lower layer pattern and a resist pattern, in a lithographic process during the production process of semiconductors. SOLUTION: There are arranged a state 17, which carries a substrate S containing a lower layer patterns 61 that is designed to be arranged alternately to make a diffraction grating with a cycle width (p), a pattern for forming an element as resist pattern 65 and marks 60 to be inspected formed individually along with the resist pattern, an irradiation element 29 which radiates a parallel monochromic light LI having a wavelengthλfor irradiating the marks 60 from the direction that gives the cycle (p) at an arbitrary angleθ1 of incidence, a photodetection means 45 for detecting a m-th order diffraction light LDm generated from the marks 60 as irradiated with the parallel monochromatic light LI and a determining means 13 to determine the presence of a superposing deviation between the lower layer pattern 61 and the resist pattern 65, based on the expression p(sinθrm-sinθi)=±mλobtained from the cycle p, incidence angleθi, exiting angleθrm of the m-th order diffraction light LDm.
|
