| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid state imaging apparatus of which a potential amplitude is large and increase in 1/f noise is suppressed. SOLUTION: The solid state imaging apparatus comprises a light receiving part in which pixel cells 1 are arranged by a plurality of numbers, and a peripheral circuit part which drives the pixel cells 1 for taking out signals. The pixel cell 1 at least comprises a phtodiode 2 which receives light to generate signal charges, a transfer transistor 3 which transfers the signal charges generated by the photodiode 2, a floating diffusion layer 5 which converts the transferred signal charge into voltage, a reset transistor 4 which resets the floating diffusion layer 5 to a specified voltage, and an amplifying transistor 6 whose gate input is the potential of the floating diffusion layer 5. The gate oxide film of at least the transfer transistor 3 or the reset transistor 4 is formed in a first film thickness, and the gate oxide film of the amplifying transistor 6 is formed in a second film thickness, with the first film being thicker than the second film. COPYRIGHT: (C)2008,JPO&INPIT
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