| 摘要 |
<p>Provided is an element structure by which operating voltage variance and a leak current in an off-state are reduced in a resistance variable type nonvolatile storage device. The nonvolatile storage device is characterized in having a laminated structure wherein a lower electrode, an upper electrode, one or more amorphous insulating layer between the lower electrode and the upper electrode, and one or more resistance variable layers are laminated.</p> |
