| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic memory having a peripheral circuit suitable for a spin injection writing method. SOLUTION: The magnetic memory includes a first magnetoresistive element which comes into a high resistance state by being supplied with a writing current in a first direction and comes into a low resistance state having the resistance value lower than that in the high resistance state by being supplied with a writing current in a second direction opposite to the first direction and is supplied with a reading current at the read-out. A second magnetoresistive element 53 comes into a high resistance state or low resistance state according to the own magnetizing state, and is fixed to the low resistance state when the direction of the reading current is the same as the first direction, and fixed to the high resistance state when the direction of the reading current is the same as the second direction. Control circuits 43, 44 and 55 are connected to the first magnetoresistive element and the second magnetoresistive element and the reading voltage applied to the first magnetoresistive element and the reading voltage applied to the second magnetoresistive element are made to be equal. COPYRIGHT: (C)2008,JPO&INPIT |
