| 摘要 |
A method manufacturing a semiconductor device is provided. Cost can be reduced and line reliability can be improved since a step for depositing a barrier metal is not required. An interlayer insulating layer, including a contact hole, can be formed on a semiconductor substrate. A seed layer, including a first metal material and at least one additive, can be formed on the interlayer insulating layer. A thermal treatment can be performed on the seed layer to form an interface layer under the seed layer, and a second metal material can be deposited on the seed layer to form a metal line.
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